High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester finctionalities

High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester finctionalities

Author(s):

Khojasteh, M. ( IBM Microelectronics Div. (USA) )

Chen, K.R. ( IBM Microelectronics Div. (USA) )

Kwong, R.W. ( IBM Microelectronics Div. (USA) )

Lawson, M.C. ( IBM Microelectronics Div. (USA) )

Varanasi, P.R. ( IBM Microelectronics Div. (USA) )

Patel, K.S. ( IBM Microelectronics Div. (USA) )

Kobayashi, E. ( JSR Microelectronics (Japan) )

2 more

Publication title:

Advances in Resist Technology and Processing XX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5039

Pub. Year:

2003

Vol.:

1

Pt.:

Session 5

Page(from):

187

Page(to):

194

Pages:

8

Pub. info.:

Bellingham, CA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448446 [0819448443]

Language:

English

Call no.:

P63600/5039

Type:

Conference Proceedings

Details

TDL ID:	ZA00013027
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Technology and Processing
Conf. info. (Number):	2003 : 20th
Conf. info. (Venue):	Santa Clara, CA
Conf. info. (Date):	2003.02.24-2003.02.26
Note for article:	Session 5. Materials for 193-nm Resists ; 5039-22

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