New approach for pattern collapse problem by increasing contact area at sub-100nm patterning

New approach for pattern collapse problem by increasing contact area at sub-100nm patterning

Author(s):

Lee, S.-K. ( Hynix Semiconductor, Inc. (South Korea) )

Jung, J.C. ( Hynix Semiconductor, Inc. (South Korea) )

Lee, M.S. ( Hynix Semiconductor, Inc. (South Korea) )

Lee, S.K. ( Hynix Semiconductor, Inc. (South Korea) )

Kim, S.Y. ( Hynix Semiconductor, Inc. (South Korea) )

Hwang, Y.-S. ( Hynix Semiconductor, Inc. (South Korea) )

Bok, C.K. ( Hynix Semiconductor, Inc. (South Korea) )

Moon, S.-C. ( Hynix Semiconductor, Inc. (South Korea) )

Shin, K.S. ( Hynix Semiconductor, Inc. (South Korea) )

Kim, S.-J. ( Dongjin Semichem Co. (South Korea) )

5 more

Publication title:

Advances in Resist Technology and Processing XX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5039

Pub. Year:

2003

Vol.:

1

Pt.:

Session 4

Page(from):

166

Page(to):

174

Pages:

9

Pub. info.:

Bellingham, CA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448446 [0819448443]

Language:

English

Call no.:

P63600/5039

Type:

Conference Proceedings

Details

TDL ID:	ZA00013027
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Technology and Processing
Conf. info. (Number):	2003 : 20th
Conf. info. (Venue):	Santa Clara, CA
Conf. info. (Date):	2003.02.24-2003.02.26
Note for article:	Session 4. Antireflective Coatings ; 5039-19

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