Specifications and methodologies for benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node and beyond

Specifications and methodologies for benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node and beyond

Author(s):

Bunday, B.D. ( International SEMATECH (USA) )
Bishop, M. ( International SEMATECH (USA) )

Publication title:

Metrology, Inspection, and Process Control for Microlithography XVII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5038

Pub. Year:

2003

Vol.:

2

Page(from):

1038

Page(to):

1052

Pages:

15

Pub. info.:

Bellingham, WA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448439 [0819448435]

Language:

English

Call no.:

P63600/5038

Type:

Conference Proceedings

Details

TDL ID:	ZA00013025
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2003 : 17th
Conf. info. (Venue):	Santa Clara, California, USA
Conf. info. (Date):	2003.02.24-2003.02.27
Note for article:	Poster Session ; 5038-130

Similar Items:

1 Conference Proceedings Results of benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node Bunday, B.D., Bishop, M., Allgair, J.A. SPIE - The International Society of Optical Engineering	7 Conference Proceedings Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control Bunday, B.D., Bishop, M., Bennett, M.H., Swyers, J.R., Haberman-Golan, Z. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Benchmarking of advanced CD-SEMs at the 130-nm CMOS technology node Bunday, B.D., Bishop, M. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Reticle CD-SEM for 65-nm technology node and beyond Schlueter, G. W. B., Nakamura, T., Matsumoto, J., Seyama, M., Whittey, J. M. SPIE - The International Society of Optical Engineering
3 Conference Proceedings Specifications, methodologies, and results of evaluation of optical critical dimension scatterometer tools at the 90nm CMOS technology node and beyond Ko, C.-H., Ku, Y., Smith, N., Shyu, D.-M., Wang, S.-C., Lu, S.-H. SPIE - The International Society of Optical Engineering	9 Conference Proceedings Determination of optimal parameters for CD-SEM measurement of line-edge roughness Bunday, B.D., Bishop, M., McCormack, D.W., Jr., Villarrubia, J.S., Vladar, A.E., Dixson, R., Vorburger, T.V., Orji, … SPIE - The International Society of Optical Engineering
4 Conference Proceedings Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control and several different CMOS features Bunday, B.D., Bishop, M., Swyers, J.R., Lensing, K.R. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Benchmarking of current generation overlay systems at the 130-nm technology node Russo, B., Bishop, M. SPIE-The International Society for Optical Engineering
5 Conference Proceedings CD-SEM measurement line-edge roughness test patterns for 193-nm lithography Bunday, B.D., Bishop, M., Villarrubia, J.S., Vladar, A.E. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Use of fast Fourier transform methods in maintaining stability of production CD-SEMs Bunday,B.D., Davidson,M.P. SPIE - The International Society for Optical Engineering
6 Conference Proceedings CD-SEM measurement line edge roughness test patterns for 193 nm lithography Bunday, B.D., Bishop, M., Villarrubia, J.S., Vladar, A.E. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Benchmarking multimode CD-SEM metrology to 180 nm Monahan,K.M., Askary,F., Elliott,R.C., Forcier,R.A., Quattrini,R., Sheumaker,B.L., Yee,J.C., Marchman,H.M., … SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12