Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

Author(s):

Hingst, T. ( Infineon Technologies GmbH (Germany) )

Marschner, T. ( Infineon Technologies GmbH (Germany) )

Moert, M. ( Infineon Technologies GmbH (Germany) )

Homilius, J. ( Infineon Technologies GmbH (Germany) )

Guevremont, M. ( KLA-Tencor Corp. (USA) )

Hopkins, J. ( KLA-Tencor Corp. (USA) )

Elazami, A. ( KLA-Tencor Corp. (USA) )

2 more

Publication title:

Metrology, Inspection, and Process Control for Microlithography XVII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5038

Pub. Year:

2003

Vol.:

1

Page(from):

274

Page(to):

285

Pages:

12

Pub. info.:

Bellingham, WA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448439 [0819448435]

Language:

English

Call no.:

P63600/5038

Type:

Conference Proceedings

Details

TDL ID:	ZA00013025
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2003 : 17th
Conf. info. (Venue):	Santa Clara, California, USA
Conf. info. (Date):	2003.02.24-2003.02.27
Note for article:	Process Control and Characterization I ; 5038-28

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