Electron-beam lithography method for sub-50-nm isolated trench with high aspect ratio

Electron-beam lithography method for sub-50-nm isolated trench with high aspect ratio

Author(s):

Yang, X.M. ( Seagate Technology LLC (USA) )

Eckert, A.R. ( Seagate Technology LLC (USA) )

Mountfield, K. ( Seagate Technology LLC (USA) )

Gentile, H. ( Seagate Technology LLC (USA) )

Seiler, C. ( Seagate Technology LLC (USA) )

Brankovic, S. ( Seagate Technology LLC (USA) )

Harris, R. ( Seagate Technology LLC (USA) )

Johns, E. ( Seagate Technology LLC (USA) )

3 more

Publication title:

Emerging Lithographic Technologies VII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5037

Pub. Year:

2003

Vol.:

1

Pt.:

Session 5

Page(from):

168

Page(to):

177

Pages:

10

Pub. info.:

Bellingham, WA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448422 [0819448427]

Language:

English

Call no.:

P63600/5037

Type:

Conference Proceedings

Details

TDL ID:	ZA00013023
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Emerging Lithographic Technologies
Conf. info. (Number):	2003 : 7th
Conf. info. (Venue):	Santa Clara, California, USA
Conf. info. (Date):	2003.02.25-2003.02.27
Note for article:	Session 5. Nanolithography/Nanopatterning I ; 5037-22

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