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Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers

Author(s):
Kulbachinskii, V.A. ( M.V.Lomonosov Moscow State Univ. (Russia) )
Lunin, R.A. ( M.V.Lomonosov Moscow State Univ. (Russia) )
Rogozin, V.A. ( M.V.Lomonosov Moscow State Univ. (Russia) )
Golikov, A.V. ( M.V.Lomonosov Moscow State Univ. (Russia) )
Kytin, V.G. ( M.V.Lomonosov Moscow State Univ. (Russia) )
Zvonkov, B.N. ( Univ. of Nizhny Novgorod (Russia) )
Nekorkin, S.M. ( Univ. of Nizhny Novgorod (Russia) )
Filatov, D.O. ( Univ. of Nizhny Novgorod (Russia) )
Visser, A. ( Univ. of Amsterdam (Netherlands) )
4 more
Publication title:
10th International Symposium on Nanostructures: Physics and Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5023
Pub. Year:
2003
Page(from):
461
Page(to):
464
Pages:
4
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819448248 [0819448249]
Language:
English
Call no.:
P63600/5023
Type:
Conference Proceedings

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