Effective mass anisotropy of T-electrons in GaAs/AlGaAs quantum well with InAs layer
- Author(s):
Vdovin, E.E. ( Institute of Microelectronics Technology (Russia) ) Khanin, Yu.N. ( Institute of Microelectronics Technology (Russia) ) Dubrovskii, Yu.V. ( Institute of Microelectronics Technology (Russia) ) Eaves, L. ( Univ. of Nottingham (United Kingdom) ) Main, P.C. ( Univ. of Nottingham (United Kingdom) ) Henini, M. ( Univ. of Nottingham (United Kingdom) ) Hill, G. ( Univ. of Sheffield (United Kingdom) ) - Publication title:
- 10th International Symposium on Nanostructures: Physics and Technology
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5023
- Pub. Year:
- 2003
- Page(from):
- 231
- Page(to):
- 234
- Pages:
- 4
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819448248 [0819448249]
- Language:
- English
- Call no.:
- P63600/5023
- Type:
- Conference Proceedings
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