Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots

Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots

Author(s):

Burbaev, T.M. ( P.N. Lebedev Physical Institute (Russia) )
Kazakov, I.P. ( P.N. Lebedev Physical Institute (Russia) )
Kurbatov, V.A. ( P.N. Lebedev Physical Institute (Russia) )
Rzaev, M.M. ( P.N. Lebedev Physical Institute (Russia) )
Vdovin, V.I. ( Institute for Chemical Problems of Microelectronics (Russia) )

Publication title:

10th International Symposium on Nanostructures: Physics and Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5023

Pub. Year:

2003

Page(from):

176

Page(to):

178

Pages:

3

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448248 [0819448249]

Language:

English

Call no.:

P63600/5023

Type:

Conference Proceedings

Details

TDL ID:	ZA00013007
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Nanostructures: Physics and Technology
Conf. info. (Number):	2002 : 10th
Conf. info. (Venue):	St. Petersburg, Russia
Conf. info. (Date):	2002.06.17-2002.06.21

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