Low-temperature processing of SiO2 thin films by HD-PECVD technique for gate dielectric applications

Low-temperature processing of SiO2 thin films by HD-PECVD technique for gate dielectric applications

Author(s):

Joshi, P.C. ( Sharp Labs. of America (USA) )

Moriguchi, M. ( Sharp Labs. of America (USA) )

Crowder, M.A. ( Sharp Labs. of America (USA) )

Droes, S.R.T. ( Sharp Labs. of America (USA) )

Flores, J.S. ( Sharp Labs. of America (USA) )

Voutsas, A.T. ( Sharp Labs. of America (USA) )

Hartzell, J.W. ( Sharp Labs. of America (USA) )

2 more

Publication title:

Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5004

Pub. Year:

2003

Page(from):

105

Page(to):

112

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448040 [0819448044]

Language:

English

Call no.:

P63600/5004

Type:

Conference Proceedings

Details

TDL ID:	ZA00012987
Series ID:	PA00000029
Conf. info. (Name):	IS&T/SPIE Electronic Imaging : Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Conf. info. (Number):	2003
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2003.01.21-2003.01.22

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