III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire (Invited Paper)

III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire (Invited Paper)

Author(s):: Khan, M.A. ( Univ. of South Carolina (USA) )
Publication title:: Light-Emitting Diodes: Research, Manufacturing, and Applications VII
Title of ser.:: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:: 4996
Pub. Year:: 2003
Page(from):: 188
Page(to):: 194
Pages:: 7
Pub. info.:: Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:: 0277786X
ISBN:: 9780819447968 [081944796X]
Language:: English
Call no.:: P63600/4996
Type:: Conference Proceedings

Details

TDL ID:	ZA00012979
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Light-emitting diodes
Conf. info. (Number):	2003 : 7th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2003.01.27-2003.01.29

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