Light extraction technologies for high-efficiency GaInN-LED devices

Light extraction technologies for high-efficiency GaInN-LED devices

Author(s):

Haerle, V. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

Hahn, B. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

Kaiser, S. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

Weimar, A. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

Eisert, D. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

Bader, S. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

Ploessl, A. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

Eberhard, F. ( OSRAM Opto Semiconductors GmbH & Co. (Germany) )

3 more

Publication title:

Light-Emitting Diodes: Research, Manufacturing, and Applications VII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4996

Pub. Year:

2003

Page(from):

133

Page(to):

138

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819447968 [081944796X]

Language:

English

Call no.:

P63600/4996

Type:

Conference Proceedings

Details

TDL ID:	ZA00012979
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Light-emitting diodes
Conf. info. (Number):	2003 : 7th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2003.01.27-2003.01.29

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