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Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates

Author(s):
Bak-Misiuk, J.
Misiuk, A.
Adamczewska, J.
Calamiotou, M.
Kozanecki, A.
Kuristyn, D.
Reginski, K.
Kaniewski, J.
Georgakilas, A.
4 more
Publication title:
Atomistic aspects of epitaxial growth
Title of ser.:
NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:
65
Pub. Year:
2002
Page(from):
467
Page(to):
476
Pages:
10
Pub. info.:
Dordrecht: Kluwer Academic Publishers
ISBN:
9781402006746 [1402006748]
Language:
English
Call no.:
N17050/65
Type:
Conference Proceedings

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