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Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

Author(s):
Misiuk, A.
Katcki, J.
Ratajczak, J.
Raineri, V.
Bak-Misiuk, J.
Gawlik, L.
Bryja, L.
Jun, J.
3 more
Publication title:
Atomistic aspects of epitaxial growth
Title of ser.:
NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:
65
Pub. Year:
2002
Page(from):
457
Page(to):
466
Pages:
10
Pub. info.:
Dordrecht: Kluwer Academic Publishers
ISBN:
9781402006746 [1402006748]
Language:
English
Call no.:
N17050/65
Type:
Conference Proceedings

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