Growth and Characterization of Multi-Layered Structures of GaAs, AIAs and AIGaAs by Molecular Beam Epitaxy

Growth and Characterization of Multi-Layered Structures of GaAs, AIAs and AIGaAs by Molecular Beam Epitaxy

Author(s):

Mathews, Sn

Publication title:

Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4746

Pub. Year:

2002

Vol.:

VOL-2

Page(from):

1328

Page(to):

1331

Pages:

4

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445001 [0819445002]

Language:

English

Call no.:

P63600/4746

Type:

Conference Proceedings

Details

TDL ID:	ZA00012784
Series ID:	PA00000029
Conf. info. (Name):	International Workshop on the Physics of Semiconductor Devices
Conf. info. (Number):	2001 : 11th
Conf. info. (Venue):	Delhi, India
Conf. info. (Date):	2001.12.11-2001.12.15

Similar Items:

1 Conference Proceedings An Attempt to Synthesize 850-900 nm SCH Laser Diodes by Low Temperature Liquid Phase Epitaxy Chandvankar, S.S., Shah, A.P., Bhattacharya, A., Chandrasekaran, K.S., Arora, B.M. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Synthesis and Characterization of Strained Quantum Structures on Plane and V Grooved InP Substrate Venkataraghavan,R., Karmakar,B., Gokhale,M.R., Chandrasekaran,K.S., John,J., Lokhre,S.G., Arora,B.M. SPIE - The International Society for Optical Engineering
2 Conference Proceedings Synthesis of TIP and Indium Thallium Phosphide Chandvankar,S.S., Sharma,T.K., Shah,A.P., Chandrasekaran,K.S., Arora,B.M., Kapoor,A.K., Verma,Devendra, Sharma,B.B. SPIE - The International Society for Optical Engineering	8 Conference Proceedings Ge RELATED DEEP LEVEL LUMINESCENCE IN InGaAs LATTICE MATCHED TO InP Chandvankar, S.S., Srivastava, A.K., Arora, B.M., Sharma, D.K. Materials Research Society
3 Conference Proceedings Can One Make Strained Quantum Structures by Liquid Phase Epitaxy: A Case Study of GaSb on GaAs Chandvankar,S.S., Khvostikov,V.P., AroraB.M., Chandrasekaran,K.S. Narosa Publishing House	9 Conference Proceedings THE GROWTH OF GaAS ON Si BY MOLECULAR BEAM EPITAXY Koch, S.M., Rosner, S.J., Schlom, Darrell, Harris, J. Jr. S. Materials Research Society
4 Conference Proceedings InGaP/GaAs Material System - Problem of Interfaces MOVPE Synthesis and Characterization Arora,B.M., Sharma,T.K., Chandrasekaran,K.S., Gokhale,M., Shah,A. Narosa Publishing House	10 Conference Proceedings GROWTH AND CHARACTERIZATIONS OF GaAs ON InP WITH DIFFERENT BUFFER STRUCTURES BY MOLECULAR BEAM EPITAXY Liu, Xiaoming, Lee, Henry P., Wang, Shyh, George, Thomas, Weber, Eicke R., Liliental-Weber, Z. Materials Research Society
5 Conference Proceedings Synthesis of high-quality InGaAs/InGaAsP/InP quantum well structures by metalorganic vapor phase epitaxy Arora,B.M., Gokhale,M., Shah,A.P., Chandrasekharan,K.S. SPIE-The International Society for Optical Engineering	11 Conference Proceedings GRIN SCH SQW AIGaAs/GaAs lasers grown by molecular beam epitaxy:modeling and operating characteristics (Invited Paper) Bugajski,M., Kaniewska,M., Reginski,K., Malag,A., Lepkowski,S., Muszalski,J. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Temperature Dependent Photoluminescence Studies of Molecular Beam Epitaxy Grown Silicon S-Doped Pseudomorphic AIGaAs/InGaAs/GaAs Quantum Wells Srinivasan, T., Muralidharan, R., Singh, S.N., Mehta, S.K., Jain, R.K. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Growth of AIxGa1-xAs/GaAs Heterostructure Using Liquid Phase Epitaxy (LPE) and its Characterization Chandrasekaran, N., Baskar, K., Arivuoli, D. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12