Temperature Dependence of Electrical Properities of Ultrathin Nitrided Oxide Grown on Strained-SiGe by Rapid Thermal Oxidation
- Author(s):
- Publication title:
- Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4746
- Pub. Year:
- 2002
- Vol.:
- VOL-2
- Page(from):
- 1225
- Page(to):
- 1227
- Pages:
- 3
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819445001 [0819445002]
- Language:
- English
- Call no.:
- P63600/4746
- Type:
- Conference Proceedings
Similar Items:
Narosa Publishing House |
SPIE-The International Society for Optical Engineering, Narosa |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering, Narosa |
3
Conference Proceedings
Structural and Electrical Characterizations of Oxynitride Films on Solid Phase Epitaxially Grown Silicon Carbide
Materials Research Society |
SPIE - The International Society for Optical Engineering |
Narosa Publishing House |
10
Conference Proceedings
Dielectric Relaxation and Defect Generation Under Pulsed and Constant Voltage Stressing of Ultrathin TiO2 Films on …
Electrochemical Society |
Narosa Publishing House |
MRS - Materials Research Society |
6
Conference Proceedings
Fabrication of Planar Inductor on Low Resistivity Silicon Substrates for RF Applications
SPIE - The International Society for Optical Engineering |
12
Conference Proceedings
Properties of ultrathin gate oxides grown in N20-based oxidation ambients by rapid thermal processing
SPIE - The International Society for Optical Engineering |