Fabrication of AIGaN/GaN high-electron-mobility transistors

Fabrication of AIGaN/GaN high-electron-mobility transistors

Author(s):

Wu, T. ( Tsinghua Univ. (China) )

Zeng, Q.-M. ( 13th Institute of Electronics (China) )

Li, X.-J.

2 more

Publication title:

Materials and devices for optical and wireless communications : APOC 2002 : Asia-Pacific Optical and Wireless Communications : 15-18 October, 2002, Shanghai, China

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4905

Pub. Year:

2002

Page(from):

335

Page(to):

337

Pages:

3

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819446947 [0819446947]

Language:

English

Call no.:

P63600/4905

Type:

Conference Proceedings

Details

TDL ID:	ZA00012754
Series ID:	PA00000029
Conf. info. (Name):	APOC : Asia Communications and Photonics
Conf. info. (Number):	2002
Conf. info. (Venue):	Shanghai, China
Conf. info. (Date):	2002.10.15-2002.10.18

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