Advanced 193 tri-tone EAPSM (9% to 18%) for 65-nm node

Advanced 193 tri-tone EAPSM (9% to 18%) for 65-nm node

Author(s):

Dieu, L. ( DuPont Photomasks, Inc. (USA) )

Fanucchi, E.L.

Hughes, G.P.

Maltabes, J.G. ( Motorola, Inc. (USA) )

Mellenthin, D.L. ( DuPont Photomasks, Inc. (USA) )

Conley, W. ( Motorola, Inc. (USA) )

Litt, L.C.

Lucas, K.

Socha, R.J. ( ASML (USA) )

Publication title:

22nd Annual BACUS Symposium on Photomask Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4889

Pub. Year:

2002

Vol.:

Part Two

Page(from):

1227

Page(to):

1233

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819446756 [0819446750]

Language:

English

Call no.:

P63600/4889

Type:

Conference Proceedings

Details

TDL ID:	ZA00012737
Series ID:	PA00000029
Conf. info. (Name):	Annual BACUS Symposium on Photomask Technology
Conf. info. (Number):	22nd
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2002.10.01-2002.10.04

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