Effect of diffusion-barrier insertion into the reflector electrode on QWIP device characteristics

Effect of diffusion-barrier insertion into the reflector electrode on QWIP device characteristics

Author(s):

Matsukura, Y. ( Fujitsu Labs. Ltd. (Japan) )
Nishino, H.
Fujii, T.

Publication title:

Infrared Technology and Applications XXVIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4820

Pub. Year:

2003

Vol.:

Part One

Page(from):

289

Page(to):

296

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445889 [0819445886]

Language:

English

Call no.:

P63600/4820

Type:

Conference Proceedings

Details

TDL ID:	ZA00012657
Series ID:	PA00000029
Conf. info. (Name):	Optics & Photonics : Infrared technology and applications
Conf. info. (Number):	2002 : 28th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	2002.07.07-2002.07.11

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