Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation

Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation

Author(s):

Kim, H.-M. ( Samsung Electro-Mechanics (South Korea) )
Huh, C. ( Kwangju Institute of Science and Technology (South Korea) )
Park, S.-J.

Publication title:

Solid state lighting II : 9-11 July, 2002, Seattle, Washington, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4776

Pub. Year:

2002

Page(from):

247

Page(to):

254

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445438 [0819445436]

Language:

English

Call no.:

P63600/4776

Type:

Conference Proceedings

Details

TDL ID:	ZA00012613
Series ID:	PA00000029
Conf. info. (Name):	Optics & Photonics : Modeling and characterization of light sources
Conf. info. (Number):	2002 : 2nd
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	2002.07.09-2002.07.11

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