Simulation of transmittance on the effect of resolution enhancement of 100-nm pattern with attenuated phase-shifting mask in 193-nm lithography

Simulation of transmittance on the effect of resolution enhancement of 100-nm pattern with attenuated phase-shifting mask in 193-nm lithography

Author(s):: Lin, C.-M. ( Taiwan Semiconductor Manufacturing Co., Ltd. )
Publication title:: Photomask and Next-Generation Lithography Mask Technology IX
Title of ser.:: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:: 4754
Pub. Year:: 2002
Page(from):: 437
Page(to):: 443
Pages:: 7
Pub. info.:: Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:: 0277786X
ISBN:: 9780819445179 [0819445177]
Language:: English
Call no.:: P63600/4754
Type:: Conference Proceedings

Details

TDL ID:	ZA00012591
Series ID:	PA00000029
Conf. info. (Name):	Photomask and next-generation lithography mask technology
Conf. info. (Number):	2002 : 9th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2002.04.23-2002.04.25

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