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Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of Gen III ICP plasma source

Author(s):
Publication title:
Photomask and Next-Generation Lithography Mask Technology IX
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4754
Pub. Year:
2002
Page(from):
291
Page(to):
302
Pages:
12
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819445179 [0819445177]
Language:
English
Call no.:
P63600/4754
Type:
Conference Proceedings

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