ESD Reliability Issues in RF CMOS Circuits
- Author(s):
Radhakrishnan, M.K. Vassilev, V. Keppens, B. De Heyn, V. Natarajan, M. Groeseneken, G. - Publication title:
- Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4746
- Pub. Year:
- 2002
- Vol.:
- VOL-1
- Page(from):
- 557
- Page(to):
- 557
- Pages:
- 1
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819445001 [0819445002]
- Language:
- English
- Call no.:
- P63600/4746
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
Measurement technique, oxide thickness and area dependence of soft-breakdown
MRS-Materials Research Society |
2
Conference Proceedings
Analysis challenges for reliability improvement in silicon micromachined devices
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
Materials Research Society |
4
Conference Proceedings
Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
5
Conference Proceedings
A Step Towards a Better Understanding of Silicon Passivated (100)Ge p- Channel Devices
Electrochemical Society |
IMAPS |
6
Conference Proceedings
Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit
Electrochemical Society |
12
Conference Proceedings
27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications
Electrochemical Society |