RF Output Power Analysis of 4H-SiC MESFETs Using a Novel Large Signal Time Domain Simulation Technique

RF Output Power Analysis of 4H-SiC MESFETs Using a Novel Large Signal Time Domain Simulation Technique

Author(s):

Publication title:

Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4746

Pub. Year:

2002

Vol.:

VOL-1

Page(from):

400

Page(to):

404

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445001 [0819445002]

Language:

English

Call no.:

P63600/4746

Type:

Conference Proceedings

Details

TDL ID:	ZA00012582
Series ID:	PA00000029
Conf. info. (Name):	International Workshop on the Physics of Semiconductor Devices
Conf. info. (Number):	2001 : 11th
Conf. info. (Venue):	Delhi, India
Conf. info. (Date):	2001.12.11-2001.12.15

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