Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Author(s):

Manakli, S. ( STMicroelectronics (France) )

Trouiller. Y. ( CEA-LETI (France) )

Toublan, O. ( Mentor Graphics Corp. (France) )

Schiavone, P. ( LTM-CNRS (France) )

Miramond, C. ( STMicroelectronics (France) )

Rody, Y.F. ( Philips Semiconductors (France) )

Sundermann, F. ( STMicroelectronics (France) )

Chapon, J.D.

Goirand, P.-J.

4 more

Publication title:

Optical Microlithography XV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4691

Pub. Year:

2002

Vol.:

Part One

Page(from):

491

Page(to):

502

Pages:

12

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819444370 [0819444375]

Language:

English

Call no.:

P63600/4691

Type:

Conference Proceedings

Details

TDL ID:	ZA00012525
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical microlithography
Conf. info. (Number):	2002 : 15th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2002.03.05-2002.03.08

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