Collapse behavior of single layer 193 and 157-nm resists: use of surfactants in the rinse to realize the sub-130-nm nodes
- Author(s):
- Hien, S. ( Infineon Technologies AG (Germany) )
- Rich, G.K. ( International SEMATECH (USA) )
- Molina, G.
- Cao, H.B. ( Univ. of Wisconsin/Madison (USA) )
- Nealey, P.F.
- Publication title:
- Advances in Resist Technology and Processing XIX
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4690
- Pub. Year:
- 2002
- Vol.:
- Part One
- Page(from):
- 254
- Page(to):
- 261
- Pages:
- 8
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819444363 [0819444367]
- Language:
- English
- Call no.:
- P63600/4690
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
2
Conference Proceedings
The use of surfactant in the rinse to improve collapse behavior of chemically amplified photoresists
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
9
Conference Proceedings
Effect of the rinse solution to avoid 193-nm resist line collapse: a study for modification of resist polymer and process conditions
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
5
Conference Proceedings
193-nm photoresists at 130-nm node:which lithographic performances for which chemical platform?
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |