Reducing CD-SEM measurement carryover effect for 193-nm resist processes using CEq

Reducing CD-SEM measurement carryover effect for 193-nm resist processes using CEq

Author(s):

Zhou, H. ( Texas Instruments Inc. (USA) )
Wang, C.-Y. ( KLA-Tencor Corp. (USA) )
Zuo, A.
Pratt, J.P.

Publication title:

Metrology, Inspection, and Process Control for Microlithography XVI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4689

Pub. Year:

2002

Vol.:

Part Two

Page(from):

742

Page(to):

746

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819444356 [0819444359]

Language:

English

Call no.:

P63600/4689

Type:

Conference Proceedings

Details

TDL ID:	ZA00012522
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, inspection, and process control for microlithography
Conf. info. (Number):	2002 : 16th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2002.03.04-2002.03.07

Similar Items:

1 Conference Proceedings 193-nm resist shrinkage carryover effect to a post-etch layer due to CD-SEM measurement Cao, G.X., Wheeler, N.J., Wong, A.S. SPIE - The International Society of Optical Engineering	7 Conference Proceedings Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193-nm lithography Ke, C.-M., Hung, H.-L., Chang, A., Chen, J.-H., Gau, T.-S., Ku, Y.-C., Lin, B.J., Otaka, T., Ueda, K., Kawada, H., … SPIE - The International Society of Optical Engineering
2 Conference Proceedings 193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process Ferri, J.E., Vieira, M., Reybrouck, M., Mastovich, M.E., Bowdoin, S., Brandom, R., Knutrud, P.C. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Comparative investigation of CD-SEM carryover effect Chernakova, A.K., Miller, B., Boonstra, T.R., Fan, A.J. SPIE-The International Society for Optical Engineering
3 Conference Proceedings Innovative techniques for automatic multi-CD-SEM image quality monitoring and matching Zhou,H., Wang,C.-Y., Pratt,J.J. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Quantification of OPC performance of 150-nm gates using top-down CD-SEM Parikh, A., Zhou, H., Wang, C.-Y., MacNaughton, C.W. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Investigation on the mechanism of the 193-nm resist linewidth reduction during the SEM measurement Wu,C.-H.J., Huang,W.-S., Chen,K.-J.R., Archie,C.N., Lagus,M.E. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Characterization of 193-nm resist layers by CD-SEM sidewall imaging Marschner, T., Stief, C. SPIE-The International Society for Optical Engineering
5 Conference Proceedings CD changes of 193-nm resists during SEM measurement Kudo,T., Bae,J.-B., Dammel,R.R., Kim,W.-K., McKenzie,D.S., Rahman,M.D., Padmanaban,M., Ng,W. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Correlating scatterometry to CD-SEM and electrical gate measurements at the 90-nm node using TMU analysis Sendelbach, M., Archie, C.N., Banke, B., Mayer, J., Nii, H., Herrera, P., Hankinson, M. SPIE - The International Society of Optical Engineering
6 Conference Proceedings 193-nm resist roughness characterization and process propagation investigation using a CD-SEM Marschner, T., Lee, A., Fuchs, S., Voelkel, L., Stief, C. SPIE - The International Society of Optical Engineering	12 Conference Proceedings E-beam curing effects on the etch and CD-SEM stability of 193-nm resists Padmanaban, M., Alemy, E., Dammel, R.R., Kim, W.-K., Kudo, T., Lee, S.-H., McKenzie, D.S., Orsi, A., Rahman, D., Chen, … SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12