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GaN-based tunnel junction in optical devices(Invited Paper)

Author(s):
Takeuchi, T. ( Agilent Technologies, Inc.(USA) )
Hasnain, G.
Corzine, S.W.
Hueschen, M.
Schneider, R.P., Jr.
Kocot, C.P.
Blomquvist, M.
Chang, Y.-L.
Lefforge, D.
Krames, M.R. ( Lumileds Lighting(USA) )
Cook, L.W.
Stockman, S.A.
Han, J. ( Yale Univ.(USA) )
Diagne, M. ( Brown Univ.(USA) )
He, Y.
Makarona, E.
Nurmikko, A.V.
12 more
Publication title:
Physics and Simulation of Optoelectronic Devices X
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4646
Pub. Year:
2002
Page(from):
555
Page(to):
562
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819443854 [0819443859]
Language:
English
Call no.:
P63600/4646
Type:
Conference Proceedings

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