Differential current mode I/O pads for 2 Gb/s in gallium arsenide

Differential current mode I/O pads for 2 Gb/s in gallium arsenide

Author(s):

Esper-Chain, R. ( Univ. de Las Palmas de Gran Canaria (Spain) )
Tobajas, F.B.
Sarmiento, R.

Publication title:

Electronics and structures for MEMS II : 17-19 December 2001, Adelaide, Australia

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4591

Pub. Year:

2001

Page(from):

221

Page(to):

230

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819443212 [0819443212]

Language:

English

Call no.:

P63600/4591

Type:

Conference Proceedings

Details

TDL ID:	ZA00012419
Series ID:	PA00000029
Conf. info. (Name):	Smart Materials, Nano-, and Micro- Smart Systems : Electronics and structures for MEMS
Conf. info. (Number):	2001 : 2nd
Conf. info. (Venue):	Adelaide, Australia
Conf. info. (Date):	2001.12.17-2001.12.19

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