Blank Cover Image

THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Author(s):
Publication title:
Multifrequency electronic/photonic devices and systems for dual-use applications : 29-30 July 2001 San Diego, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4490
Pub. Year:
2001
Page(from):
96
Page(to):
103
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819442048 [0819442046]
Language:
English
Call no.:
P63600/4490
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures

Lin,G.-R., Liu,T.-A., Pan,C.-L.

SPIE - The International Society for Optical Engineering
7 Conference Proceedings *ION IMPLANTATION RELATED DEFECTS IN GaAs

Jones, K. S., Bollong, M., Haynes, T. E., Deal, M. D., Allen, E. L., Robinson, H. G.

Materials Research Society
2 Conference Proceedings Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs

Lin,G.-R., Pan,C.-L.

SPIE - The International Society for Optical Engineering
8 Conference Proceedings Photonic phase-tuning circuit for controlling the delay time of passively mode-locked Ti:sapphire laser

Lin,G.-R., Chang,Y.-C., Liu,T.-A., Pan,C.-L.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Arsenic-implanted GaAs: an alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications (Invited Paper)

Pan,C.-L., Lin,G.-R.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Pulsed X-ray annealing of arsenic-implanted silicon

Sigmon, T.W., Osias, D.E., Scheider, R.L., Gilman, C., Dahlbacka, G.

North Holland
4 Conference Proceedings Characterizations of Ion-Implanted GaAs Substrates by Optically Excited Terahertz Radiation

Lin, G.-R., Pan, C.-L.

Electrochemical Society
10 Conference Proceedings Ion Implanted GaAs MESFET Characteristics for Different Dopants and Implanted Energy

Singh,Jai Shankar, Khan,R.U., Pal,B.B., Chattopadhyay,S.N.

SPIE-The International Society for Optical Engineering, Narosa
5 Conference Proceedings Ultra-broadband THZ field detection by ion-implanted III-V PC antenna (Invited Paper)

Pan, C.-L.

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Defects and diffusion in Si+ implanted GaAs

Jones, K. S., Robinson, H. G., Haynes, T. E., Deal, M. D., Lee, C. C., Allen, E. L.

MRS - Materials Research Society
6 Conference Proceedings THz radiation from 3-mm parallel gap GaAs photoconductive dipole antenna

Shi, W., Jia, W., Hou, L., Zhang, X., Xu, M., Xu, X.

SPIE - The International Society of Optical Engineering
12 Conference Proceedings SPUTTERING INDUCED CHANGES IN DEFECT MORPHOLOGY AND DOPANT DIFFUSION FOR Si IMPLANTED GaAs: INFLUENCE OF ION ENERGY AND IMPLANT TEMPERATURE

Robinson, H. G., Lee, C. C., Haynes, T. E., Allen, E. L., Deal, M. D., Jones, K. S.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12