Highly charged ion-secondary ion mass spectrometry (HCI-SIMS): toward metrology solutions for sub-100-nm technology nodes

Highly charged ion-secondary ion mass spectrometry (HCI-SIMS): toward metrology solutions for sub-100-nm technology nodes

Author(s):

Schenkel,T. ( Lawrence Berkeley National Lab. )

Publication title:

Engineering thin films with ion beams, nanoscale diagnostics, and molecular manufacturing : 30-31 July 2001, San Diego, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4468

Pub. Year:

2001

Page(from):

35

Page(to):

46

Pages:

12

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441829 [0819441821]

Language:

English

Call no.:

P63600/4468

Type:

Conference Proceedings

Details

TDL ID:	ZA00012182
Series ID:	PA00000029
Conf. info. (Name):	Optics & Photonics : Engineering thin films with ion beams, nanoscale diagnostics, and molecular manufacturing
Conf. info. (Number):	2001
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	2001.07.30-2001.07.31

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