Technology and properties of GaAlAsSb layers grown on GaSb substrates

Technology and properties of GaAlAsSb layers grown on GaSb substrates

Author(s):

Piskorski,M. ( Institute of Electron Technology )

Publication title:

International Conference on Solid State Crystals 2000 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 9-13 October, 2000, Zakopane, Poland

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4413

Pub. Year:

2000

Page(from):

76

Page(to):

81

Pages:

6

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441164 [0819441163]

Language:

English

Call no.:

P63600/4413

Type:

Conference Proceedings

Details

TDL ID:	ZA00012128
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Solid State Crystals
Conf. info. (Number):	2000
Conf. info. (Venue):	Zakopane, Poland
Conf. info. (Date):	2000.10.09-2000.10.13

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