Fabrication of NIST-format x-ray masks with 4-Gb DRAM patterns

Fabrication of NIST-format x-ray masks with 4-Gb DRAM patterns

Author(s):

Tanaka,Y. ( NEC Corp. )

Publication title:

Photomask and Next-Generation Lithography Mask Technology VIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4409

Pub. Year:

2001

Page(from):

660

Page(to):

668

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441119 [0819441112]

Language:

English

Call no.:

P63600/4409

Type:

Conference Proceedings

Details

TDL ID:	ZA00012125
Series ID:	PA00000029
Conf. info. (Name):	Photomask and next-generation lithography mask technology
Conf. info. (Number):	2001 : 8th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2001.04.25-2001.04.27

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