Effect of clear field ratio on critical dimension in the dry etching process

Effect of clear field ratio on critical dimension in the dry etching process

Author(s):

Lee,C.-J. ( DuPont Photomasks Korea Ltd. )

Publication title:

Photomask and Next-Generation Lithography Mask Technology VIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4409

Pub. Year:

2001

Page(from):

396

Page(to):

400

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441119 [0819441112]

Language:

English

Call no.:

P63600/4409

Type:

Conference Proceedings

Details

TDL ID:	ZA00012125
Series ID:	PA00000029
Conf. info. (Name):	Photomask and next-generation lithography mask technology
Conf. info. (Number):	2001 : 8th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2001.04.25-2001.04.27

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