Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithography
- Author(s):
Nam,K.-H. ( DuPont Photomasks Korea Ltd. ) Kim,L.-J. Jeong,H.-S. Lee,S.-W. Lee,I.-S. Shin,C. Kim,H.-S. Dieu,L. Paek,S.W. Koo,S.-S. Bae,S.-M. Ham,Y.-M. Shin,K.-S. - Publication title:
- Photomask and Next-Generation Lithography Mask Technology VIII
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4409
- Pub. Year:
- 2001
- Page(from):
- 70
- Page(to):
- 80
- Pages:
- 11
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819441119 [0819441112]
- Language:
- English
- Call no.:
- P63600/4409
- Type:
- Conference Proceedings
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