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In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by spectroscopic ellipsometery and comparison with other established techniques

Author(s):
Publication title:
In-line characterization, yield, reliability, and failure analysis in microelectronic manufacturing II : 31 May-1 June 2001, Edinburgh, UK
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4406
Pub. Year:
2001
Page(from):
131
Page(to):
140
Pages:
10
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819441072 [0819441074]
Language:
English
Call no.:
P63600/4406
Type:
Conference Proceedings

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