Junction formation by hydrogenation for HgCdTe diodes

Junction formation by hydrogenation for HgCdTe diodes

Author(s):

Yang,K.D. ( Korea Advanced Institute of Science and Technology )
Choi,J.H.
Bae,S.H.
Lee,H.C.

Publication title:

Infrared technology and applications XXVII : 16-20 April 2001, Orlando, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4369

Pub. Year:

2001

Page(from):

412

Page(to):

418

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440648 [0819440647]

Language:

English

Call no.:

P63600/4369

Type:

Conference Proceedings

Details

TDL ID:	ZA00012085
Series ID:	PA00000029
Conf. info. (Name):	Defense, Security, and Sensing : Infrared technology and applications
Conf. info. (Number):	2001 : 27th
Conf. info. (Venue):	Orlando, FL, USA
Conf. info. (Date):	2001.04.16-2001.04.20

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