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4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180゜C

Author(s):
A'daraliev,M. ( A.F. Ioffe Physico-Technical Institute )
Zotova,N.V.
Karandashev,S.A.
Matveev,B.A.
Remenniy,M.A.
Stus',N.M.
Talalakin,G.N.
Malyutenko,V.K.
Malyutenko,O.Yu.
4 more
Publication title:
Fifth international conference on material science and material properties for infrared optoelectronics : 22-24 may 2000, Kiev, Ukraine
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4355
Pub. Year:
2000
Page(from):
161
Page(to):
167
Pages:
7
Pub. info.:
Bellingham, Washington: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819440648 [0819440649]
Language:
English
Call no.:
P63600/4355
Type:
Conference Proceedings

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