Improvement of metal photo process margin with OPC and CMP for 0.14-μm DRAM technology node and beyond

Improvement of metal photo process margin with OPC and CMP for 0.14-μm DRAM technology node and beyond

Author(s):

Bae,D. ( Samsung Electronics Co., Ltd. )

Publication title:

Optical Microlithography XIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4346

Pub. Year:

2001

Vol.:

4346

Pt.:

Two of Two Parts

Page(from):

1451

Page(to):

1461

Pages:

11

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440327 [0819440329]

Language:

English

Call no.:

P63600/4346

Type:

Conference Proceedings

Details

TDL ID:	ZA00012062
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical microlithography
Conf. info. (Number):	2001 : 14th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2001.02.27-2001.03.02

Similar Items:

1 Conference Proceedings Improvement of mask CD uniformity for below 45-nm node technology H. Lee, S. Bae, J. Park, D. Nam, B. Kim Society of Photo-optical Instrumentation Engineers	7 Conference Proceedings Contact hole patterning performance of ArF resist for 0.10μm technology node Kim, J.-S., Jung, J.-C., Kong, K.-K., Lee, G.-S., Lee, S.-K., Hwang, Y.-S., Shin, K.-S. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepper Hyun, Y.-S., Kim, D.-J., Koh, C.-W., Park, S.-N., Kwon, W.-T. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Robust and fast OPC approach for metal interconnects of 0.13um logic devices Park,J.-S., Kim,D.-H., Park,C.-H., Kim,Y.-H., Yoo,M.-H., Kong,J.-T., Kim,H.-W., Yoo,S.-I. SPIE-The International Society for Optical Engineering
3 Conference Proceedings Validation of ArF chromeless PSM in the sub-100-nm node DRAM cell Lee, J.-H., Chung, D.-H., Cha, D.-C., Kim, H.-S., Park, J.-S., Nam, D.-G., Woo, S.-K., Cho, H.-S., Han, W.-S. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Era of double exposure in 7O nm node DRAM cell Lim, C.-M., Eom, T.-S., Kim, S.-M., Bok, C., Ma, W.-K., Park, G.-D., Moon, S.-C., Kim, J.-W. SPIE - The International Society of Optical Engineering
4 Conference Proceedings Pt patterning as a storage node by chemically assisted physical etching for 1-Gb DRAM and beyond Shin,H.-S., Kim,M.-P., Kim,J.-W., Kim,Y.-W., Choi,I.-H. SPIE - The International Society for Optical Engineering	10 Conference Proceedings Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography Park, J.-S., Kim, S.-H., Shin, I.-K., Choi, S.-W., Sohn, J.-M., Lee, J.-H., Shin, H.-S., Laidig, T.L., Van den Broeke, … SPIE - The International Society of Optical Engineering
5 Conference Proceedings Optical proximity correction considering mask manufacturability and its application to 0.25-ｦﾌm DRAM for enhanced device performance Park,C.-H., Rhie,S.-U., Choi,J.-H., Park,J.-S., Seo,H.-W., Kim,Y.-H., Park,Y.-K., Han,W.-S., Lee,W.-S., Kong,J.-T. SPIE - The International Society for Optical Engineering	11 Conference Proceedings ArF issues of 90-nm-node DRAM device integration Goo, D.-H., Kim, B.-S., Park, J.-S., Yoon, K.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, J.-T. SPIE-The International Society for Optical Engineering
6 Conference Proceedings OPC technology road map to 0.14-ｦﾌm design rules Chen,J.F., Laidig,L., Wampler,K.E., Caldwell,R.F., Naderi,A.R., Van Den Broeke,D. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Silicon Nitride Polish-Stop for CMP of BPSG Films on sub-0.25μm DRAMs Stephens, J., Dobuzinsky, D., Gambina, J., Glashauser, W., Huckels, K., Hanebeck, J., Kraxenberger, M., Naeem, M., Rupp, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12