Application of full-chip level optical proximity correction to memory device with sub-0.10-μm design rule and ArF lithography

Application of full-chip level optical proximity correction to memory device with sub-0.10-μm design rule and ArF lithography

Author(s):

Yune,H.-S. ( Hyundai Electronics Industries Co., Ltd. )

Publication title:

Optical Microlithography XIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4346

Pub. Year:

2001

Vol.:

4346

Pt.:

One of Two Parts

Page(from):

241

Page(to):

250

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440327 [0819440329]

Language:

English

Call no.:

P63600/4346

Type:

Conference Proceedings

Details

TDL ID:	ZA00012062
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical microlithography
Conf. info. (Number):	2001 : 14th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2001.02.27-2001.03.02

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