ArF resist for contact hole application
- Author(s):
Chen,K.-J.R. ( IBM Microelectronics ) Lawaon,M.C. Hughes,T. Brunsvld,W.R. Varanasi,P.R. Keller,R. Jordhamo,G.M. - Publication title:
- Advances in Resist Technology and Processing XVIII
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4345
- Pub. Year:
- 2001
- Vol.:
- 4345
- Pt.:
- Two of Two Parts
- Page(from):
- 791
- Page(to):
- 797
- Pages:
- 7
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819440310 [0819440310]
- Language:
- English
- Call no.:
- P63600/4345
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
Postmodification as a way to improve the lithographic performance of resist materials
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
3
Conference Proceedings
"IBM 193-nm bilayer resist: materials, lithographic performance, and optimization"
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
4
Conference Proceedings
"193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform …
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
5
Conference Proceedings
Selection of attenuated phase shift mask compatible contact hole resists for KrF optical lithography
SPIE - The International Society of Optical Engineering |
11
Conference Proceedings
Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |