Blank Cover Image

Advanced 4.7-GB DVD-RAM with a 4×data transfer rate

Author(s):
Publication title:
Optical data storage 2001 : 22-25 April 2001 Santa Fe, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4342
Pub. Year:
2001
Page(from):
154
Page(to):
159
Pages:
6
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819440280 [0819440280]
Language:
English
Call no.:
P63600/4342
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Dual-layer write-once media for 1x-4x-speed recording based on Blu-ray Disc format

Uno, M., Akiyama, T., Kitaura, H., Kojima, R., Nishiuchi, K., Yamada, N.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Multilayer write-once media with Te-O-Pd films utilizing violet laser

Kitaura,H., Hisada,K., Narumi,K., Nishiuchi,K., Yamada,N.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Phase-change material for use in rewritable dual-layer optical disk

Yamada,N., Kojima,R., Uno,M., Akiyama,T., Kitaura,H., Narumi,K., Nishiuchi,K.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

S.Y. Ji, K. Kojima, R. Kosugi, S. Saito, Y. Sakuma

Trans Tech Publications
3 Conference Proceedings hA5:Approach for high-speed recording of 4.7-GB DVD-R

Fujii,T., Tajima,T., Negishi,R., Okitsu,I., Tomizawa,Y., Ebara,K., Nakajima,T., Hamada,E.

SPIE - The International Society for Optical Engineering
9 Conference Proceedings Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth

R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata

Trans Tech Publications
4 Conference Proceedings Improvement of Homoepitaxial Layer Quality Grown on 4H-SiC Si-Face Substrate Lower than 1 Degree Off Angle

K. Kojima, S. Ito, A. Nagata, H. Okumura

Trans Tech Publications
10 Conference Proceedings Filling of Deep Trench by Epitaxial SiC Growth

K. Kojima, A. Nagata, S. Ito, Y. Sakuma, R. Kosugi

Trans Tech Publications
5 Conference Proceedings Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

K. Kojima, K. Masumoto, S. Ito, A. Nagata, H. Okumura

Trans Tech Publications
11 Conference Proceedings Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth

R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata

Trans Tech Publications
6 Conference Proceedings Over 500 years lifetime dual-layer Blu-ray disc recordable based on Te-O-Pd recording material [6282-81]

Miyagawa, n., Kitaura, H., Takahashi, K., Doi, Y., Habuta, H., Furumiya, S., Nishiuchi, K., Yamada, N.

SPIE - The International Society of Optical Engineering
12 Conference Proceedings (4.7) 7:43 - 7:46 PM - Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe

Wittmann, R., Hossinger, A., Selberherr, S.(TU Vienna)

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12