Ultravlolet photodetectors based on GaN and AlxGa1-xN epitaxial layers

Ultravlolet photodetectors based on GaN and AlxGa1-xN epitaxial layers

Author(s):

Shmidt,N.M. ( A.F. Ioffe Physico-Technical Institute )

Publication title:

16th International conference on photoelectronics and night vision devices : 25-27 May 2000 Moscow, Russia

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4340

Pub. Year:

2000

Page(from):

92

Page(to):

96

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440266 [0819440264]

Language:

English

Call no.:

P63600/4340

Type:

Conference Proceedings

Details

TDL ID:	ZA00012056
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Photoelectronics and Night Vision Devices
Conf. info. (Number):	2000 : 16th
Conf. info. (Venue):	Moscow, Russia
Conf. info. (Date):	2000.05.25-2000.05.27

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