Blank Cover Image

GaN deep-level capture barriers

Author(s):
Publication title:
Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4288
Pub. Year:
2001
Page(from):
209
Page(to):
218
Pages:
10
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819439666 [0819439665]
Language:
English
Call no.:
P63600/4288
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

Johnstone, Daniel K., Ahoujja, Mohamed, Yeo, Yung Kee, Hengehold, Robert L., Guido, Louis

Materials Research Society
7 Conference Proceedings Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

Tumakha, S.P., Porter, L.M., Ewing, D.J., Wahab, Q., Ma, X.Y., Sudarshan, T.S., Brillson, L.J.

Trans Tech Publications
2 Conference Proceedings Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient Spectroscopy

Ahoujja, Mo, Hogsed, M., Yeo, Y. K., Hengehold, R. L.

Materials Research Society
8 Conference Proceedings Characterization of GaN Schottky Barrier Photodiodes With a Low-temperature GaN Cap Layer

Lee, M.L., Sheu, J.K., Su, Y.K., Chang, S.J., Lai, W.C., Chi G.C.

Electrochemical Society
3 Conference Proceedings Deep Level Defect Study of Ion Implanted(Ar,Mg,Cr)n-Type 6H-SiC by Deep Level Transient Spectroscopy

Scott,M.B., Scofield,J.D., Yeo,Y.K., Hengehold,R.L.

Trans Tech Publications
9 Conference Proceedings Band Bending Near the Surface In GaN as Detected by a Charge Sensitive Probe

Sabuktagin, S., Reshchikov, M.A., Johnstone, D.K., Morkoc, H.

Materials Research Society
4 Conference Proceedings Summary of deep level defect characteristics in GaN and AlGaN

D. Johnstone

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer

Chi, G.C., Sheu, J.K., Lee, M.L., Kao, C.J., Su, Y.K., Chang, S.J., Lai, W.C.

Materials Research Society
5 Conference Proceedings Electrical Characterization of As- and [As+Si]-Doped GaN Grown by Metalorganic Chemical Vapor Deposition

Ahoujja, M., Elhamri, S., Berney, R., Yeo, Y. K., Hengehold, R. L.

Materials Research Society
11 Conference Proceedings Deep levels in n-type schottky and p+ -n homojunction GaN diodes

Hierro, A., Kwon, D., Ringel, S. A., Hansen, M., Mishra, U. K., DenBaars, S. P., Speck, J. S.

MRS-Materials Research Society
6 Conference Proceedings Common deep level in GaN

Wen,T.-C., Lee,S.-C., Lee,W.-J, Guo,J.-D., Feng,M.-S.

SPIE - The International Society for Optical Engineering
12 Conference Proceedings Comparison of deep levels in GaN grown by MBE. MOCVD. and HVPE

Johnstone, D., Biyikli, S., Dogan, S., Moon, Y.T., Yun, F., Morkoc, H.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12