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Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family

Author(s):
Fuchs,F. ( Fraunhofer-Institut fur Angewandte Festkorperphysik )
Burkle,L.
Hamid,R.
Herres,N.
Pletschen,W.
Sah,R.E.
Kiefer,R.
Schmitz,J.
3 more
Publication title:
Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4288
Pub. Year:
2001
Page(from):
171
Page(to):
182
Pages:
12
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819439666 [0819439665]
Language:
English
Call no.:
P63600/4288
Type:
Conference Proceedings

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