Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation

Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation

Author(s):

Mogg,S. ( Royal Institute of Technology )
Piprek,J.

Publication title:

Physics and Simulation of Optoelectronic Devices IX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4283

Pub. Year:

2001

Page(from):

227

Page(to):

237

Pages:

11

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439611 [0819439614]

Language:

English

Call no.:

P63600/4283

Type:

Conference Proceedings

Details

TDL ID:	ZA00011999
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	2001 : 9th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2001.01.22-2001.01.26

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