Blank Cover Image

Two Dimensional Leakage Current Distribution of Ultrathin Oxide on Stepped Si Surface

Author(s):
Publication title:
High Purity Silicon VI : proceedings of the sixth International Symposium
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4218
Pub. Year:
2000
Page(from):
425
Page(to):
433
Pages:
9
Pub. info.:
Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9781566772846 [1566772842]
Language:
English
Call no.:
P63600/4218
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Two Dimensional Leakage Current Distribution of Ultrathin Oxide on Stepped Si Surface

Murata, M., Tokuda, N., Hojo, D., Yamabe, K.

Electrochemical Society
7 Conference Proceedings Oxide Leakage Currents and Oxygen Deficient Silicon

Lenahan, P.M., Mele, J., Fattu, M., Lowry, R.K., Woodbury, D.

Electrochemical Society
2 Conference Proceedings Topographic Change at the SiO2/Si Interface with Multilayer Oxidation for Various Temperatures

Hojo, D., Tokuda, N., Yamabe, K.

Electrochemical Society
8 Conference Proceedings GATE?CONTROLLED PN JUNCTION LEAKAGE CURRENT FOR WIDE RANGE OF PERIMETER-TO-AREA RATIOS-AN INCREASE IN THE LEAKAGE CURRENT CAUSED BY DEFECTS RELATED TO OXYGEN …

Ucuiyama, H., Mcheldlidze, T., Matsumoto, K., Nisimura, M., Yamabe, K.

Electrochemical Society
3 Conference Proceedings Morphological Change in Surface and Interface during Ultrathin SiO₂ Film Growth

R. Hasunuma, J. Okamoto, N. Tokuda, K. Yamabe

Electrochemical Society
9 Conference Proceedings Wear-Out and Stress-Induced Leakage Current of Ultrathin Gate Oxides

Thees, H.-J., Osburn, C.M., Shiely, J.P., Massoud, H.Z.

Electrochemical Society
4 Conference Proceedings Oxide Surface Roughness During Stepwise Wet Etching of Fowler-Nordheim Stressed Silicon Dioxide Films

Yamabe, K., Liao, K., Murata, M.

Electrochemical Society
10 Conference Proceedings Dielectric Degradation of Gate SiO2 Films by Cu Contamination Posterior to Polvcrvstalline Si Gate MOS Canacitor Fabrication

Onizawa, T., Higuchi, K., Goto, M., Tokuda, N., Hasunuma, R., Yamabe, K.

Electrochemical Society
5 Conference Proceedings Two Step O2/N2O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta2O5 Films

Lau, W. S., Perera, M. T. Chandima, Han, T., Sandler, N. P., Tung, C. H., Sheng, T. T., Chu, P. K., Chong, T. C.

MRS - Materials Research Society
11 Conference Proceedings Measuring Interface State Distributions in Ultrathin MOS Capacitors With Direct Tunnel Current Leakage

Song, H., Farmer, K. R.

MRS - Materials Research Society
6 Conference Proceedings Two-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)

R. Hasunuma, T. Fukasawa, R. Kosugi, Y. Ishida, K. Yamabe

Trans Tech Publications
12 Conference Proceedings Local Electrical Field Characteristics of Cu-Contaminated SiO2 Thin Films

Tokuda, N., Kanda, T., Yamasaki, S., Miki, K., Yamabe, K.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12