KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process

KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process

Author(s):

Kim,J.

Publication title:

20th Annual BACUS Symposium on Photomask Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4186

Pub. Year:

2000

Page(from):

287

Page(to):

296

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819438492 [0819438499]

Language:

English

Call no.:

P63600/4186

Type:

Conference Proceedings

Details

TDL ID:	ZA00011906
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
Conf. info. (Number):	2000 : 20th
Conf. info. (Venue):	Monterey, CA, USA
Conf. info. (Date):	2000.09.13-2000.09.15

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