Technology of electroplating copper with low-K material a-C:F for 0.15-μm damascene interconnection
- Author(s):
Shieh,J.-M. Suen,S.-C. Lin,K.-C. Chang,S.-C. Dai,B.-T. Chen,C.-F. Feng,M.-S. - Publication title:
- Challenges in process integration and device technology : 18-19 September 2000, Santa Clara, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4181
- Pub. Year:
- 2000
- Page(from):
- 335
- Page(to):
- 342
- Pages:
- 8
- Pub. info.:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819438423 [0819438421]
- Language:
- English
- Call no.:
- P63600/4181
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15-μm damascene architecture
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
2
Conference Proceedings
Identifying process window marginalities of reticle designs for 0.15/0.13-μm technologies
SPIE-The International Society for Optical Engineering |
8
Conference Proceedings
Proven Extendibility of Low Damage Cu-CMP Process for Sub-0.13 μm ULSI Interconnects
Electrochemical Society |
3
Conference Proceedings
0.13-/0.15-μm production reticle process window qualification procedure for 200-mm manufacturing fab
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |