Blank Cover Image

Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15-μm damascene architecture

Author(s):
Publication title:
Challenges in process integration and device technology : 18-19 September 2000, Santa Clara, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4181
Pub. Year:
2000
Page(from):
152
Page(to):
160
Pages:
9
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819438423 [0819438421]
Language:
English
Call no.:
P63600/4181
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Technology of electroplating copper with low-K material a-C:F for 0.15-μm damascene interconnection

Shieh,J.-M., Suen,S.-C., Lin,K.-C., Chang,S.-C., Dai,B.-T., Chen,C.-F., Feng,M.-S.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Development of Damascene Etch Processes for Organic Dielectric Materials

Rajagopalan, G., Taylor, A., Foster, C., Bass, S., Morey, I., Flanner, J., Elfingboe, S.

Electrochemical Society
2 Conference Proceedings Reactive Ion Etching of Ir Films with a TiN Mask in Ar/02/BCl3 Helicon Wave Plasma

Chiang, M.C., Pan, F.M., Liu, T.P., Wei, T.C., Dai, B.T., Chien, H.C.

Electrochemical Society
8 Conference Proceedings Overlay improvement on 0.15-μm production with ASML IOSc (improved overlay scanner) package

Liu,K.-Y., Wang,S.S., Chu,Y.Y., Hsieh,J.C.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings 0.13-/0.15-μm production reticle process window qualification procedure for 200-mm manufacturing fab

Chang, Z.-W., Wu, C.-M., Mo, M., Shieh, C.-C., Cheng, D.S., Chen, C.-C., Yang, R.Y., Randall, D.W., Yu, W.-C.

SPIE - The International Society of Optical Engineering
9 Conference Proceedings Plasma Induced Damage of High Density Plasma FSG in 0.18 μm Technology Node

Ang, T.C., Tay, M.G.L., Ong, P.I., Loh, W.B., Loong, S.Y.

Electrochemical Society
4 Conference Proceedings M=0 Helicon Plasma for the Etching Application

Nogami, H., Ogahara, Y., Mashiro, S., Tsukada, T.

Electrochemical Society
10 Conference Proceedings Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepper

Hyun, Y.-S., Kim, D.-J., Koh, C.-W., Park, S.-N., Kwon, W.-T.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Plasma Etching for the Application to Low-K Dielectrics Devices

J.W. Lee, H.W. Kim, J.W. Han, M.S. Kim, B.D. Yoo, M.H. Kim, C.H. Lee, C.H. Lim, S.K. Hwang, C. Lee, D.J. Chung, S.G. …

Trans Tech Publications
11 Conference Proceedings Proven Extendibility of Low Damage Cu-CMP Process for Sub-0.13 μm ULSI Interconnects

Tsai, T.C., flu, S.C., Lin, Z.H., Hsu, S.H., Hsu, C.L., Dai, J., Yang, F., Lin, M.H., Chen, H.C., Hsieh, W.Y.

Electrochemical Society
6 Conference Proceedings Identifying process window marginalities of reticle designs for 0.15/0.13-μm technologies

Lo, S.C., Hsieh, L.K., Yeh, J.B., Pai, Y.-C., Tseng, W., Lin, M., Peterson, I.B.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Model-based OPC for 0.13-μm contacts using 248-nm Att PSM

Shin, J.-J., Wu, T.C., Chen, C.-K., Liu, R.-G., Ku, Y.C., Lin, B.J.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12