Blank Cover Image

Advanced InGaAs detectors on GaAs substrates

Author(s):
Publication title:
Infrared technology and applications XXVI : 30 July - 3 August 2000, San Diego, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4130
Pub. Year:
2000
Page(from):
749
Page(to):
759
Pages:
11
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819437754 [0819437751]
Language:
English
Call no.:
P63600/4130
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Epitaxial InAs detectors optically immersed to GaAs microlenses

Kaniewski,J., Orman,Z., Piotrowski,J., Sioma,M., Ornoch,L., Romanis,M.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Advanced InGaAs/lnAIAs/lnP avalanche photodiodes for high-speed detection of 1.55 µm infrared radiation

J. Kaniewski, J. Muszalski, J. Piotrowski

Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings Reciprocal lattice mapping of InGaAs Layers grown on InP(001)and GaAs(001)substrates

Bak-Misiuk,J., Kaniewski,J., Domagata,J., Reginski,K., Adamczewska,J., Trela,J.

SPIE - The International Society for Optical Engineering
8 Conference Proceedings Advanced GaSb/InGaAsSb/ALGaAsSb 2-2.4ｦﾌm photovoltaic detectors

Piotrowski, T. T., Piotrowska, A., Kaminska, E., Golaszewska, K., Papis, E., Piskorski, M., Jung, W., Katcki, J., Kudla, …

MRS-Materials Research Society
3 Conference Proceedings Refractive GaAs microlenses monolithically integrated with InGaAs and HgCdTe photodetectors

Piotrowski, J., Mucha, H., Orman, Z., Pawluczyk, J., Ratajczak, J., Kaniewski, J.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation

Kaniewski, J., Muszalski, J., Pawluczyk, J., Piotrowski, J.

SPIE - The International Society of Optical Engineering
4 Conference Proceedings Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates

Bak-Misiuk, J., Misiuk, A., Adamczewska, J., Calamiotou, M., Kozanecki, A., Kuristyn, D., Reginski, K., Kaniewski, J., …

Kluwer Academic Publishers
10 Conference Proceedings Uncooled or minimally cooled 10μm photodetectors with subnanosecond response time

A. Piotrowski, K. Ktos, W. Gawron, J. Pawluczyk, Z. Orman, J. Piotrowski

SPIE - The International Society of Optical Engineering
5 Conference Proceedings InAs photodetectors for high-speed detection of infrared radiation

Piotrowski, J., Orman, Z., Kaniewski, J.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings STUDY OF DX CENTERS IN GaAs1-xPx:Te

Kaniewski, J., Kaniewska, M.

Materials Research Society
6 Conference Proceedings Uncooled photovoltaic Hg1-xCdxTe LWIR detectors

Piotrowski,J., Grudzien,M., Nowak,Z., Orman,Z., Pawluczyk,J., Romanis,M., Gawron,W.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings GaAs/AIGaAs complex structures examined by photoreflectance spectroscopy

Sek,G., Misiewicz,J., Kaniewska,M., Reginski,K., Muszalski,J.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12